Low Driving Voltage and High Mobility Ambipolar Field-Effect Transistors with PbS Colloidal Nanocrystals

Authors

  • Satria Zulkarnaen Bisri,

    Corresponding author
    1. Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
    • Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands.
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  • Claudia Piliego,

    1. Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
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  • Maksym Yarema,

    1. Institute for Semiconductor and Solid State Physics, University of Linz, Allenbergerstrasse 69, Linz 4040, Austria
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  • Wolfgang Heiss,

    1. Institute for Semiconductor and Solid State Physics, University of Linz, Allenbergerstrasse 69, Linz 4040, Austria
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  • Maria Antonietta Loi

    Corresponding author
    1. Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands
    • Zernike Institute for Advanced Materials, University of Groningen, Nijenborgh 4, 9747 AG Groningen, The Netherlands.
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Abstract

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PbS colloidal nanocrystals (NCs) are promising materials for optoelectronic devices, due to their size-tunable properties. However, there is still minimal understanding of their charge transport mechanism. Through a combination of ligand selections, ambipolar transistor structure optimization, and electrochemical gating usage, high carrier mobility is achieved. The outstanding device characteristics open possibility to investigate the intrinsic transport properties of PbS NCs.

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