High Mobility N-Type Transistors Based on Solution-Sheared Doped 6,13-Bis(triisopropylsilylethynyl)pentacene Thin Films
Version of Record online: 1 JUL 2013
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 25, Issue 33, pages 4663–4667, September 6, 2013
How to Cite
Naab, B. D., Himmelberger, S., Diao, Y., Vandewal, K., Wei, P., Lussem, B., Salleo, A. and Bao, Z. (2013), High Mobility N-Type Transistors Based on Solution-Sheared Doped 6,13-Bis(triisopropylsilylethynyl)pentacene Thin Films. Adv. Mater., 25: 4663–4667. doi: 10.1002/adma.201205098
- Issue online: 3 SEP 2013
- Version of Record online: 1 JUL 2013
- Manuscript Revised: 29 APR 2013
- Manuscript Received: 12 DEC 2012
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