Advanced Materials

Correction: Valence State-Dependent Ferromagnetism in Mn-Doped NiO Thin Films

Authors

  • Wensheng Yan,

  • Zhihu Sun,

  • Zhongrui Li,

  • Qinghua Liu,

  • Tao Yao,

  • Zhiyun Pan,

  • Chao Wang,

  • Fengchun Hu,

  • Yong Jiang,

  • Zeming Qi,

  • Fei Zeng,

  • Shiqiang Wei

Errata

This article corrects:

  1. Valence State-Dependent Ferromagnetism in Mn-Doped NiO Thin Films Volume 24, Issue 3, 353–357, Article first published online: 22 November 2011

The authors regret two mistakes in Figure 1 and the Experimental Section of the above article published on the Early View platform of Advanced Materials.

The correct Figure 1 is:

Figure 1.

(a) Schematic band structure of transition-metal doped oxide semiconductors with impurity bands induced by structural defects. (b) Partial DOS for NiO: (top panel) with a Ni vacancy, (middle panel) with doped Mn2+, and (bottom panel) with doped Mn3+.

Further, the last section of the Experimental Section was missing the institutions at which the experiments were carried out and should read:

[…] The Mn K-edge X-ray absorption fine structure (XAFS) spectra were collected in fluorescence mode at room temperature at the U7C beamline of National Synchrotron Radiation Laboratory (NSRL), China. The Mn L3-edge and O K-edge X-ray absorption near-edge structure (XANES) spectra were collected in a mode of sample drain current under a vacuum better than 5 × 10−5 Pa at the U19 beamline of NSRL.

Ancillary