An Optimized Ultraviolet-A Light Photodetector with Wide-Range Photoresponse Based on ZnS/ZnO Biaxial Nanobelt (Adv. Mater. 17/2012)

Authors

  • Linfeng Hu,

    1. Department of Materials Science, Fudan University, Shanghai 200433, PR China
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  • Jian Yan,

    1. Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, PR China
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  • Meiyong Liao,

    1. Optical and Electronic Materials Unit, National Institute for Materials Science (NIMS), Namiki 1-1, Tsukuba, Ibaraki 305-0044, Japan
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  • Hongjun Xiang,

    1. Key Laboratory of Computational Physical Sciences, (Ministry of Education) and Department of Physics, Fudan University, Shanghai 200433, PR China
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  • Xingao Gong,

    1. Key Laboratory of Computational Physical Sciences, (Ministry of Education) and Department of Physics, Fudan University, Shanghai 200433, PR China
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  • Lide Zhang,

    1. Key Laboratory of Materials Physics and Anhui Key Laboratory of Nanomaterials and Nanostructures, Institute of Solid State Physics, Hefei Institutes of Physical Science, Chinese Academy of Sciences, Hefei 230031, PR China
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  • Xiaosheng Fang

    Corresponding author
    1. Department of Materials Science, Fudan University, Shanghai 200433, PR China
    • Department of Materials Science, Fudan University, Shanghai 200433, PR China.
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Abstract

original image

A novel 1D/1D semiconductor/semiconductor nanocomposite-based photodetector is fabricated by X. S. Fang and co-workers on page 2305 from highly crystalline ZnS/ZnO biaxial nanobelts. Optimized performance of the ZnS/ZnO nanobelt photodetector is better than that of pure ZnS or ZnO nanostructures, as it combines UV-A photoresponsivity, high sensitivity, and a fast response speed. This photodetector is particularly suitable for UV-A light detection, and its speed enables its potential application in highfrequency light-wave communications, photoelectronic switches, memory storage devices, and optoelectronic circuits.

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