Resistive Switching Memories: Observation of Conductance Quantization in Oxide-Based Resistive Switching Memory (Adv. Mater. 29/2012)

Authors

  • Xiaojian Zhu,

    1. Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhuangshi Road 519, Ningbo, Zhejiang 315201, PR China
    2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhejiang, Ningbo 315201, People's Republic of China
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  • Wenjing Su,

    1. Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhuangshi Road 519, Ningbo, Zhejiang 315201, PR China
    2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhejiang, Ningbo 315201, People's Republic of China
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  • Yiwei Liu,

    1. Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhuangshi Road 519, Ningbo, Zhejiang 315201, PR China
    2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhejiang, Ningbo 315201, People's Republic of China
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  • Benlin Hu,

    1. Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhuangshi Road 519, Ningbo, Zhejiang 315201, PR China
    2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhejiang, Ningbo 315201, People's Republic of China
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  • Liang Pan,

    1. Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhuangshi Road 519, Ningbo, Zhejiang 315201, PR China
    2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhejiang, Ningbo 315201, People's Republic of China
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  • Wei Lu,

    Corresponding author
    1. Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA
    • Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, Michigan 48109, USA
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  • Jiandi Zhang,

    1. Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803, USA
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  • Run-Wei Li

    Corresponding author
    1. Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhuangshi Road 519, Ningbo, Zhejiang 315201, PR China
    2. Zhejiang Province Key Laboratory of Magnetic Materials and Application Technology, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhejiang, Ningbo 315201, People's Republic of China
    • Key Laboratory of Magnetic Materials and Devices, Ningbo Institute of Material Technology and Engineering (NIMTE), Chinese Academy of Sciences (CAS), Zhuangshi Road 519, Ningbo, Zhejiang 315201, PR China.
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Abstract

original image

Conductance quantization phenomena in oxide-based resistive switching memories are reported by Xiaojian Zhu, Wei Lu, Run-Wei Li, and co-workers on page 3941. These phenomena were found to relate to the atomic-scale conductive filaments formed in insulating oxides under an applied electrical field. The study shows that the quantum conductance effect can be well modulated and can be used for multi-level data storage.

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