Advanced Materials

Organic Semiconductors: Dry Lithography of Large-Area, Thin-Film Organic Semiconductors Using Frozen CO2 Resists (Adv. Mater. 46/2012)

Authors

  • Matthias E. Bahlke,

    Corresponding author
    1. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
    • Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA.
    Search for more papers by this author
  • Hiroshi A. Mendoza,

    1. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
    Search for more papers by this author
  • Daniel T. Ashall,

    1. School of Electronic Engineering, Bangor University, Dean Street, Bangor, LL57 1UT, UK
    Search for more papers by this author
  • Allen S. Yin,

    1. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
    Search for more papers by this author
  • Marc A. Baldo

    1. Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, MA 02139, USA
    Search for more papers by this author

Abstract

Frozen carbon dioxide can be used as a phase-change resist to perform dry lithography of organic thin films, as shown by Matthias E. Bahlke and co-workers on page 6136. The resist sublimes closest to the surface, separating the still-solid resist that in turn lifts off undesired organic material. This new technique will help address the incompatibility of organic semiconductors with traditional photolithography.

original image

Ancillary