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Advanced Materials

Transit Phenomena in Organic Field-Effect Transistors Through Kelvin-Probe Force Microscopy

Authors

  • Christian Melzer,

    Corresponding author
    1. Ruprecht-Karls-Universität Heidelberg, Centre for Advanced Materials, Im Neuenheimer Feld 270, 69120 Heidelberg, Germany
    • Ruprecht-Karls-Universität Heidelberg, Centre for Advanced Materials, Im Neuenheimer Feld 270, 69120 Heidelberg, Germany.
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  • Christopher Siol,

    1. Technical University of Darmstadt, Institute for Material Science, Electronic Materials Division, Petersenstraße 23, 64287 Darmstadt, Germany
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  • Heinz von Seggern

    1. Technical University of Darmstadt, Institute for Material Science, Electronic Materials Division, Petersenstraße 23, 64287 Darmstadt, Germany
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Abstract

The temporal evolution of the surface-potential distribution in the channel of pentacene based field-effect transistors is investigated during the charge reversal from the electron to the hole dominated operation. This measurement allows the determination of the carrier density and electric field dependent hole mobility in the sub-threshold regime of the transistor.

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