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Keywords:

  • printed ZnO transistors;
  • electrolyte gated transistors (EGTs);
  • thin-film transistors;
  • flexible substrates;
  • ion-gel gate insulators
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Printed, flexible sub-2 V ZnO electrolyte gated transistors (EGTs) are demonstrated. ZnO EGTs with high-capacitance ion-gel gate insulators are printed on a kapton substrate and the devices exhibit high electron mobility (1.61 cm−2 V−1 s−1), low operation voltage (<2 V), and good electrical/mechanical stabilities.