Get access

Printed, sub-2V ZnO Electrolyte Gated Transistors and Inverters on Plastic

Authors

  • Kihyon Hong,

    1. Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. SE. Minneapolis, MN 55455, USA
    Search for more papers by this author
  • Se Hyun Kim,

    1. Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. SE. Minneapolis, MN 55455, USA
    Search for more papers by this author
  • Keun Hyung Lee,

    1. Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. SE. Minneapolis, MN 55455, USA
    Search for more papers by this author
  • C. Daniel Frisbie

    Corresponding author
    1. Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. SE. Minneapolis, MN 55455, USA
    • Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. SE. Minneapolis, MN 55455, USA.
    Search for more papers by this author

Abstract

original image

Printed, flexible sub-2 V ZnO electrolyte gated transistors (EGTs) are demonstrated. ZnO EGTs with high-capacitance ion-gel gate insulators are printed on a kapton substrate and the devices exhibit high electron mobility (1.61 cm−2 V−1 s−1), low operation voltage (<2 V), and good electrical/mechanical stabilities.

Ancillary