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Printed, sub-2V ZnO Electrolyte Gated Transistors and Inverters on Plastic

Authors

  • Kihyon Hong,

    1. Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. SE. Minneapolis, MN 55455, USA
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  • Se Hyun Kim,

    1. Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. SE. Minneapolis, MN 55455, USA
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  • Keun Hyung Lee,

    1. Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. SE. Minneapolis, MN 55455, USA
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  • C. Daniel Frisbie

    Corresponding author
    1. Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. SE. Minneapolis, MN 55455, USA
    • Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. SE. Minneapolis, MN 55455, USA.
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Abstract

Printed, flexible sub-2 V ZnO electrolyte gated transistors (EGTs) are demonstrated. ZnO EGTs with high-capacitance ion-gel gate insulators are printed on a kapton substrate and the devices exhibit high electron mobility (1.61 cm−2 V−1 s−1), low operation voltage (<2 V), and good electrical/mechanical stabilities.

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