Advanced Materials

Sub-10 nm Graphene Nanoribbon Array Field-Effect Transistors Fabricated by Block Copolymer Lithography

Authors

  • Jeong Gon Son,

    1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139 (USA)
    2. Photo-Electronic Hybrids Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (South Korea)
    Current affiliation:
    1. These authors contributed equally to this work.
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  • Myungwoo Son,

    1. School of Materials Science and Engineering and Department of Nanobio Materials and Electronics, Gwangju Institute of Science & Technology, Gwangju, 500-712 (South Korea)
    Current affiliation:
    1. These authors contributed equally to this work.
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  • Kyeong-Joo Moon,

    1. Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749 (South Korea)
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  • Byoung Hun Lee,

    1. School of Materials Science and Engineering and Department of Nanobio Materials and Electronics, Gwangju Institute of Science & Technology, Gwangju, 500-712 (South Korea)
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  • Jae-Min Myoung,

    1. Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749 (South Korea)
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  • Michael S. Strano,

    1. Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139 (USA)
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  • Moon-Ho Ham,

    Corresponding author
    1. School of Materials Science and Engineering and Department of Nanobio Materials and Electronics, Gwangju Institute of Science & Technology, Gwangju, 500-712 (South Korea)
    • School of Materials Science and Engineering and Department of Nanobio Materials and Electronics, Gwangju Institute of Science & Technology, Gwangju, 500-712 (South Korea).
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  • Caroline A. Ross

    Corresponding author
    1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139 (USA)
    • Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139 (USA)
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Abstract

Sub-10 nm Graphene Nanoribbon Arrays are fabricated over large areas by etching CVD-grown graphene. A mask is used made by the directed self-assembly of a cylindrical PS-b-PDMS block copolymer under solvent annealing guided by a removable template. The optimized solvent annealing process, surface-modified removable polymeric templates, and high Flory-Huggins interaction parameters of the block copolymer enable a highly aligned array of nanoribbons with low line edge roughness to be formed. This leads to a higher on/off ratio and stronger temperature dependence of the current for nanoribbon FETs, and a photocurrent which is 30 times larger compared to unpatterned graphene.

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