Sub-10 nm Graphene Nanoribbon Array Field-Effect Transistors Fabricated by Block Copolymer Lithography
Version of Record online: 25 JUN 2013
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 25, Issue 34, pages 4723–4728, September 14, 2013
How to Cite
Son, J. G., Son, M., Moon, K.-J., Lee, B. H., Myoung, J.-M., Strano, M. S., Ham, M.-H. and Ross, C. A. (2013), Sub-10 nm Graphene Nanoribbon Array Field-Effect Transistors Fabricated by Block Copolymer Lithography. Adv. Mater., 25: 4723–4728. doi: 10.1002/adma.201300813
- Issue online: 9 SEP 2013
- Version of Record online: 25 JUN 2013
- Manuscript Revised: 1 APR 2013
- Manuscript Received: 20 FEB 2013
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