Temperature-Independent Transport in High-Mobility Dinaphtho-Thieno-Thiophene (DNTT) Single Crystal Transistors



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The angular and temperature dependence of the field-effect mobility are investigated for p-type DNTT single crystals in a vacuum-gap structure. Temperature-independent transport behavior and weak mobility anisotropy are observed, with the best mobility approaching 10 cm2 V−1 s−1. Structural characterization and simulation suggest exceptionally high-quality and high-purity crystals.