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Non-Volatile Control of 2DEG Conductivity at Oxide Interfaces

Authors

  • Shin-Ik Kim,

    1. Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea
    2. Department of Nanomaterials Science and Technology, University of Science and Technology, Daejeon, 305-333, Republic of Korea
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  • Dai-Hong Kim,

    1. Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 151-744, Republic of Korea
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  • Yoonjung Kim,

    1. Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea
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  • Seon Young Moon,

    1. Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea
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  • Min-Gyu Kang,

    1. Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea
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  • Jong Kwon Choi,

    1. Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea
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  • Ho Won Jang,

    1. Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 151-744, Republic of Korea
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  • Seong Keun Kim,

    1. Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea
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  • Ji-Won Choi,

    1. Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea
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  • Seok-Jin Yoon,

    1. Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea
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  • Hye Jung Chang,

    1. Department of Nanomaterials Science and Technology, University of Science and Technology, Daejeon, 305-333, Republic of Korea
    2. Advanced Analysis Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea
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  • Chong-Yun Kang,

    1. Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea
    2. Department of Nanomaterials Science and Technology, University of Science and Technology, Daejeon, 305-333, Republic of Korea
    3. KU-KIST Graduate School of Converging Science and Technology, Korea University, Seoul, 136-701, Republic of Korea
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  • Suyoun Lee,

    1. Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea
    2. Department of Nanomaterials Science and Technology, University of Science and Technology, Daejeon, 305-333, Republic of Korea
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  • Seong-Hyeon Hong,

    1. Department of Materials Science and Engineering, Research Institute of Advanced Materials, Seoul National University, Seoul 151-744, Republic of Korea
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  • Jin-Sang Kim,

    Corresponding author
    1. Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea
    • Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea.===

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  • Seung-Hyub Baek

    Corresponding author
    1. Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea
    2. Department of Nanomaterials Science and Technology, University of Science and Technology, Daejeon, 305-333, Republic of Korea
    • Electronic Materials Research Center, Korea Institute of Science and Technology, Seoul 136-791, Republic of Korea.===

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Abstract

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The functionalization of two-dimensional electron gas (2DEG) at oxide interfaces can be realized integrating 2DEG with multifunctional oxide overlayers by epitaxial growth. Using a ferroelectric Pb(Zr0.2Ti0.8)O3 overlayer on 2DEG (LaAlO3/SrTiO3), we demonstrate a model system of the functionalized 2DEG, where electrical conductivity of 2DEG can be reversibly controlled with a large on/off ratio (>1000) in a non-volatile way by ferroelectric polarization switching.

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