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Universal Electric-Field-Driven Resistive Transition in Narrow-Gap Mott Insulators

Authors

  • Pablo Stoliar,

    Corresponding author
    1. Laboratoire de Physique des Solides, CNRS UMR 8502, Université Paris Sud, Bât 510, 91405 Orsay, France, ECyT, Universidad Nacional de San Martín, Campus Miguelete, 1650 San Martín, Argentina
    • Laboratoire de Physique des Solides, CNRS UMR 8502, Université Paris Sud, Bât 510, 91405 Orsay, France, ECyT, Universidad Nacional de San Martín, Campus Miguelete, 1650 San Martín, Argentina
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  • Laurent Cario,

    1. Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP32229, 44322 Nantes, France
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  • Etiene Janod,

    1. Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP32229, 44322 Nantes, France
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  • Benoit Corraze,

    1. Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP32229, 44322 Nantes, France
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  • Catherine Guillot-Deudon,

    1. Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP32229, 44322 Nantes, France
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  • Sabrina Salmon-Bourmand,

    1. Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP32229, 44322 Nantes, France
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  • Vincent Guiot,

    1. Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP32229, 44322 Nantes, France
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  • Julien Tranchant,

    1. Institut des Matériaux Jean Rouxel (IMN), Université de Nantes, CNRS, 2 rue de la Houssinière, BP32229, 44322 Nantes, France
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  • Marcelo Rozenberg

    Corresponding author
    1. Laboratoire de Physique des Solides, CNRS UMR 8502, Université Paris Sud, Bât 510, 91405 Orsay, France
    • Laboratoire de Physique des Solides, CNRS UMR 8502, Université Paris Sud, Bât 510, 91405 Orsay, France.
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Abstract

A striking universality in the electric-field-driven resistive switching is shown in three prototypical narrow-gap Mott systems. This model, based on key theoretical features of the Mott phenomenon, reproduces the general behavior of this resistive switching and demonstrates that it can be associated with a dynamically directed avalanche. This model predicts non-trivial accumulation and relaxation times that are verified experimentally.

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