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High-Gain Phototransistors Based on a CVD MoS2 Monolayer

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Abstract

A phototransistor based on a chemical vapor deposited (CVD) MoS2 monolayer exhibits a high photoresponsivity (2200 A W−1) and an excellent photogain (5000). The presence of shallow traps contributes to the persistent photoconductivity. Ambient adsorbates act as p-dopants to MoS2, decreasing the carrier mobility, photoresponsivity, and photogain.

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