Tunable Electronic Transport Properties of Metal-Cluster-Decorated III–V Nanowire Transistors

Authors

  • Ning Han,

    1. Department of Physics and Materials Science and Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S. A. R., P. R. China
    2. Shenzhen Research Institute, City University of Hong Kong, Shenzhen, P. R. China
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  • Fengyun Wang,

    1. Department of Physics and Materials Science and Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S. A. R., P. R. China
    2. Shenzhen Research Institute, City University of Hong Kong, Shenzhen, P. R. China
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  • Jared J. Hou,

    1. Department of Physics and Materials Science and Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S. A. R., P. R. China
    2. Shenzhen Research Institute, City University of Hong Kong, Shenzhen, P. R. China
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  • Sen Po Yip,

    1. Department of Physics and Materials Science and Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S. A. R., P. R. China
    2. Shenzhen Research Institute, City University of Hong Kong, Shenzhen, P. R. China
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  • Hao Lin,

    1. Department of Physics and Materials Science and Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S. A. R., P. R. China
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  • Fei Xiu,

    1. Department of Physics and Materials Science and Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S. A. R., P. R. China
    2. Shenzhen Research Institute, City University of Hong Kong, Shenzhen, P. R. China
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  • Ming Fang,

    1. Department of Physics and Materials Science and Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S. A. R., P. R. China
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  • Zaixing Yang,

    1. Department of Physics and Materials Science and Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S. A. R., P. R. China
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  • Xiaoling Shi,

    1. Department of Physics and Materials Science and Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S. A. R., P. R. China
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  • Guofa Dong,

    1. Department of Physics and Materials Science and Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S. A. R., P. R. China
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  • Tak Fu Hung,

    1. Department of Physics and Materials Science and Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S. A. R., P. R. China
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  • Johnny C. Ho

    Corresponding author
    1. Department of Physics and Materials Science and Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S. A. R., P. R. China
    2. Shenzhen Research Institute, City University of Hong Kong, Shenzhen, P. R. China
    • Department of Physics and Materials Science and Centre for Functional Photonics (CFP), City University of Hong Kong, 83 Tat Chee Avenue, Kowloon, Hong Kong S. A. R., P. R. China.
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Abstract

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A metal-cluster-decoration approach is utilized to tailor electronic transport properties (e.g., threshold voltage) of III–V NWFETs through the modulation of free carriers in the NW channel via the deposition of different metal clusters with different work function. The versatility of this technique has been demonstrated through the fabrication of high-mobility enhancement-mode InAs NW parallel FETs as well as the construction of low-power InAs NW inverters.

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