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Novel Hybrid Organic–Inorganic Spin-on Resist for Electron- or Photon-Based Nanolithography with Outstanding Resistance to Dry Etching

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Errata

This article is corrected by:

  1. Errata: Novel Hybrid Organic-Inorganic Spin-on Resist for Electron- or Photon-Based Nanolithography with Outstanding Resistance to Dry Etching Volume 26, Issue 5, 674, Article first published online: 3 February 2014

Abstract

A new spin-on alumina-based resist exhibits excellent performance in terms of both achievable lateral resolution and etch resistance in fluorine-based non-cryo-cooled dry etching processes. The resist has selectivity greater than 100:1 with respect to the underlying silicon during the etching process, patternability with various lithographic tools (UV, X-rays, electron beam, and nanoimprint lithography), and positive and negative tone behavior depending only on the developer chemistry.

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