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Line Patterns from Cylinder-Forming Photocleavable Block Copolymers

Authors

  • Weiyin Gu,

    1. Department of Polymer Science and Engineering, 120 Governors Drive, University of Massachusetts, Amherst, MA 01003, USA
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  • Hui Zhao,

    1. Institute for Technical and Macromolecular Chemistry, University of Hamburg, Bundesstr. 45, 20146 Hamburg, Germany
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  • Qingshuo Wei,

    1. Department of Polymer Science and Engineering, 120 Governors Drive, University of Massachusetts, Amherst, MA 01003, USA
    Current affiliation:
    1. Nanosystem Research Institute (NRI), National Institute of Advanced Industrial Science and Technology (AIST), Tsukuba, Japan
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  • E. Bryan Coughlin,

    1. Department of Polymer Science and Engineering, 120 Governors Drive, University of Massachusetts, Amherst, MA 01003, USA
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  • Patrick Theato,

    1. Institute for Technical and Macromolecular Chemistry, University of Hamburg, Bundesstr. 45, 20146 Hamburg, Germany
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  • Thomas P. Russell

    Corresponding author
    1. Department of Polymer Science and Engineering, 120 Governors Drive, University of Massachusetts, Amherst, MA 01003, USA
    • Department of Polymer Science and Engineering, 120 Governors Drive, University of Massachusetts, Amherst, MA 01003, USA.
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Abstract

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A robust route for the preparation of nanoscopic line patterns from polystyrene-block-poly(ethylene oxide) featuring a photocleavable o-nitrobenzyl ester junction is demonstrated. After mild UV (λ = 365 nm) exposure and selective removal of the PEO microdomains, the polymer trench patterns are used as scaffold to fabricate highly ordered arrays of silica or Au line patterns.

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