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Advanced Materials

High-Performance ZnO Transistors Processed Via an Aqueous Carbon-Free Metal Oxide Precursor Route at Temperatures Between 80–180 °C

Authors

  • Yen-Hung Lin,

    1. Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, United Kingdom
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  • Hendrik Faber,

    1. Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, United Kingdom
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  • Kui Zhao,

    1. Materials Science and Engineering, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
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  • Qingxiao Wang,

    1. Advanced Nanofabrication, Imaging and Characterization Laboratory, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia
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  • Aram Amassian,

    1. Materials Science and Engineering, Division of Physical Sciences and Engineering, King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia
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  • Martyn McLachlan,

    1. Department of Materials and Centre for Plastic Electronics, Imperial College London, London Royal School of Mines, London SW7 2AZ, United Kingdom
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  • Thomas D. Anthopoulos

    Corresponding author
    1. Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, United Kingdom
    • Department of Physics and Centre for Plastic Electronics, Blackett Laboratory, Imperial College London, London SW7 2AZ, United Kingdom.
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Errata

This article is corrected by:

  1. Errata: Correction: High-Performance ZnO Transistors Processed Via an Aqueous Carbon-Free Metal Oxide Precursor Route at Temperatures Between 80–180 °C Volume 25, Issue 34, 4689, Article first published online: 9 September 2013

Abstract

An aqueous and carbon-free metal-oxide precursor route is used in combination with a UV irradiation-assisted low-temperature conversion method to fabricate low-voltage ZnO transistors with electron mobilities exceeding 10 cm2/Vs at temperatures <180 °C. Because of its low temperature requirements the method allows processing of high-performance transistors onto temperature sensitive substrates such as plastic.

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