High-Performance ZnO Transistors Processed Via an Aqueous Carbon-Free Metal Oxide Precursor Route at Temperatures Between 80–180 °C
Version of Record online: 25 JUN 2013
Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Special Issue: Organic and Hybrid Materials for Flexible Electronics
Volume 25, Issue 31, pages 4340–4346, August 21, 2013
How to Cite
Lin, Y.-H., Faber, H., Zhao, K., Wang, Q., Amassian, A., McLachlan, M. and Anthopoulos, T. D. (2013), High-Performance ZnO Transistors Processed Via an Aqueous Carbon-Free Metal Oxide Precursor Route at Temperatures Between 80–180 °C. Adv. Mater., 25: 4340–4346. doi: 10.1002/adma.201301622
- Issue online: 13 AUG 2013
- Version of Record online: 25 JUN 2013
- Manuscript Received: 11 APR 2013
Vol. 25, Issue 34, 4689, Version of Record online: 9 SEP 2013
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