Advanced Materials

Wet Chemical Etching of Semipolar GaN Planes to Obtain Brighter and Cost-Competitive Light Emitters

Authors

  • Sungmin Jung,

    1. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju, Chonbuk 561-756, Republic of Korea
    Search for more papers by this author
  • Ki-Ryong Song,

    1. Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, Gyeonggi 429-793, Republic of Korea
    Search for more papers by this author
  • Sung-Nam Lee,

    Corresponding author
    1. Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, Gyeonggi 429-793, Republic of Korea
    • Department of Nano-Optical Engineering, Korea Polytechnic University, Siheung, Gyeonggi 429-793, Republic of Korea.
    Search for more papers by this author
  • Hyunsoo Kim

    Corresponding author
    1. School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju, Chonbuk 561-756, Republic of Korea
    • School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju, Chonbuk 561-756, Republic of Korea
    Search for more papers by this author

Abstract

Spotlight on etching: (11-22) semipolar GaN plane light-emitting diodes (LEDs) are demonstrated using a wet-etching process. A trigonal prism cell structure with a (0001) c plane and nnn{10-10} m planes is formed after KOH wet etching, and leads to a better ohmic contact and enhanced light extraction. LEDs fabricated by wet etching show excellent output performance 1.89 times higher than that of the reference LEDs.

original image

Ancillary