Get access
Advanced Materials

Enhancing Electron Mobility at the LaAlO3/SrTiO3 Interface by Surface Control

Authors

  • Yanwu Xie,

    Corresponding author
    1. Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford, California 94305, USA
    2. Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
    • Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford, California 94305, USA.
    Search for more papers by this author
  • Christopher Bell,

    1. Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
    Search for more papers by this author
  • Yasuyuki Hikita,

    1. Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
    Search for more papers by this author
  • Satoshi Harashima,

    1. Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
    2. Department of Applied Physics, The University of Tokyo, Bunkyo-ku, Tokyo, 113-8656, Japan
    Search for more papers by this author
  • Harold Y. Hwang

    1. Geballe Laboratory for Advanced Materials, Department of Applied Physics, Stanford University, Stanford, California 94305, USA
    2. Stanford Institute for Materials and Energy Sciences, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA
    Search for more papers by this author

Abstract

Mobility of electrons confined at the LaAlO3/SrTiO3 interface is significantly enhanced by surface control using surface charges and adsorbates, reaching a low temperature value more than 20 000 cm2 V−1s−1. A uniform trend that mobility increases with decreasing sheet carrier density is observed.

original image
Get access to the full text of this article

Ancillary