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Advanced Materials

High-Performance and Low-Power Rewritable SiOx 1 kbit One Diode–One Resistor Crossbar Memory Array

Authors

  • Gunuk Wang,

    1. Department of Chemistry, Rice University, 6100 Main Street, Houston, Texas 77005, USA
    2. Smalley Institute for Nanoscale Science and Technology, Rice University, 6100 Main Street, Houston, Texas 77005, USA
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  • Adam C. Lauchner,

    1. Applied Physics Program, Rice University, 6100 Main Street, Houston, Texas 77005, USA
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  • Jian Lin,

    1. Department of Mechanical Engineering and Material Science, Rice University, 6100 Main Street, Houston, Texas 77005, USA
    2. Smalley Institute for Nanoscale Science and Technology, Rice University, 6100 Main Street, Houston, Texas 77005, USA
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  • Douglas Natelson,

    Corresponding author
    1. Smalley Institute for Nanoscale Science and Technology, Rice University, 6100 Main Street, Houston, Texas 77005, USA
    2. Department of Physics and Astronomy, Department of Electrical and Computer Engineering, Rice University, 6100 Main Street, Houston, Texas 77005, USA
    • Department of Physics and Astronomy, Department of Electrical and Computer Engineering, Rice University, 6100 Main Street, Houston, Texas 77005, USA.
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  • Krishna V. Palem,

    1. Department of Computer Science, Rice University, 6100 Main Street, Houston, Texas 77005, USA
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  • James M. Tour

    Corresponding author
    1. Department of Chemistry, Rice University, 6100 Main Street, Houston, Texas 77005, USA
    2. Department of Mechanical Engineering and Material Science, Rice University, 6100 Main Street, Houston, Texas 77005, USA
    3. Smalley Institute for Nanoscale Science and Technology, Rice University, 6100 Main Street, Houston, Texas 77005, USA
    4. Department of Computer Science, Rice University, 6100 Main Street, Houston, Texas 77005, USA
    • Department of Chemistry, Rice University, 6100 Main Street, Houston, Texas 77005, USA
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Abstract

An entire 1-kilobit crossbar device based upon SiOx resistive memories with integrated diodes has been made. The SiOx-based one diode–one resistor device system has promise to satisfy the prerequisite conditions for next generation non-volatile memory applications.

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