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Tunable Electroluminescence in Planar Graphene/SiO2 Memristors

Authors

  • Congli He,

    1. Nanoscale Physics and devices Laboratory, Beijing National Laboratory for Condensed, Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
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  • Jiafang Li,

    1. Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
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  • Xing Wu,

    1. SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, School of Electrical Science and Engineering, Southeast University, Nanjing, China
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  • Peng Chen,

    1. Nanoscale Physics and devices Laboratory, Beijing National Laboratory for Condensed, Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
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  • Jing Zhao,

    1. Nanoscale Physics and devices Laboratory, Beijing National Laboratory for Condensed, Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
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  • Kuibo Yin,

    1. SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, School of Electrical Science and Engineering, Southeast University, Nanjing, China
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  • Meng Cheng,

    1. Nanoscale Physics and devices Laboratory, Beijing National Laboratory for Condensed, Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
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  • Wei Yang,

    1. Nanoscale Physics and devices Laboratory, Beijing National Laboratory for Condensed, Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
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  • Guibai Xie,

    1. Nanoscale Physics and devices Laboratory, Beijing National Laboratory for Condensed, Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
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  • Duoming Wang,

    1. Nanoscale Physics and devices Laboratory, Beijing National Laboratory for Condensed, Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
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  • Donghua Liu,

    1. Nanoscale Physics and devices Laboratory, Beijing National Laboratory for Condensed, Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
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  • Rong Yang,

    1. Nanoscale Physics and devices Laboratory, Beijing National Laboratory for Condensed, Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
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  • Dongxia Shi,

    1. Nanoscale Physics and devices Laboratory, Beijing National Laboratory for Condensed, Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
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  • Zhiyuan Li,

    1. Laboratory of Optical Physics, Beijing National Laboratory for Condensed Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
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  • Litao Sun,

    1. SEU-FEI Nano-Pico Center, Key Laboratory of MEMS of Ministry of Education, School of Electrical Science and Engineering, Southeast University, Nanjing, China
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  • Guangyu Zhang

    Corresponding author
    1. Nanoscale Physics and devices Laboratory, Beijing National Laboratory for Condensed, Matter Physics and Institute of Physics, Chinese Academy of Sciences, Beijing, China
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Abstract

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Electroluminescence and resistive switching are first realized simultaneously in graphene/SiO2 memristor devices. The electroluminescence peaks can be tuned between 550 nm and 770 nm reliably via setting the device to different resistance states by applying different voltages. The combination of resistive switching and electroluminescence may bring new functionalities for these memristor devices which are fully compatible with silicon-based electronics.

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