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A Light Incident Angle Switchable ZnO Nanorod Memristor: Reversible Switching Behavior Between Two Non-Volatile Memory Devices

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Abstract

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A light incident angle selectivity of a memory device is demonstrated. As a model system, the ZnO resistive switching device has been selected. Electrical signal is reversibly switched between memristor and resistor behaviors by modulating the light incident angle on the device. Moreover, a liquid passivation layer is introduced to achieve stable and reversible exchange between the memristor and WORM behaviors.

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