A Light Incident Angle Switchable ZnO Nanorod Memristor: Reversible Switching Behavior Between Two Non-Volatile Memory Devices
Version of Record online: 1 SEP 2013
© 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Volume 25, Issue 44, pages 6423–6429, November 26, 2013
How to Cite
Park, J., Lee, S., Lee, J. and Yong, K. (2013), A Light Incident Angle Switchable ZnO Nanorod Memristor: Reversible Switching Behavior Between Two Non-Volatile Memory Devices. Adv. Mater., 25: 6423–6429. doi: 10.1002/adma.201303017
- Issue online: 26 NOV 2013
- Version of Record online: 1 SEP 2013
- Manuscript Revised: 31 JUL 2013
- Manuscript Received: 2 JUL 2013
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