High-performance sensors based on molybdenum disulfide (MoS2) grown by sulfurization of sputtered molybdenum layers are presented. Using a simple integration scheme, it is found that the electrical conductivity of MoS2 films is highly sensitive to NH3 adsorption, consistent with n-type semiconducting behavior. A sensitivity of 300 ppb at room temperature is achieved, showing the high potential of 2D transition metal-dichalcogenides for sensing.
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