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Voltage-Controlled Nonvolatile Molecular Memory of an Azobenzene Monolayer through Solution-Processed Reduced Graphene Oxide Contacts

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Abstract

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The solution-processed fabrication of an azobenzene (ABC10) monolayer-based nonvolatile memory device on a reduced graphene oxide (rGO) electrode is successfully accomplished. Trans-–cis isomerizations of ABC10 between two rGO electrodes in a crossbar device are controlled by applied voltage. An rGO soft-contact top electrode plays an important role in the conformational-change-dependent conductance switching process of an ABC10 monolayer.

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