The solution-processed fabrication of an azobenzene (ABC10) monolayer-based nonvolatile memory device on a reduced graphene oxide (rGO) electrode is successfully accomplished. Trans-–cis isomerizations of ABC10 between two rGO electrodes in a crossbar device are controlled by applied voltage. An rGO soft-contact top electrode plays an important role in the conformational-change-dependent conductance switching process of an ABC10 monolayer.
If you can't find a tool you're looking for, please click the link at the top of the page to "Go to old article view". Alternatively, view our Knowledge Base articles for additional help. Your feedback is important to us, so please let us know if you have comments or ideas for improvement.