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Critical Factors to Achieve Low Voltage- and Capacitance-Based Organic Field-Effect Transistors




Hydrophobic organo-compatible but low-capacitance dielectrics (10.5 nFcm−2), polystyrene-grafted SiO2 could induce surface-mediated large crystal grains of face-to-face stacked triethylsilylethynyl anthradithiophene (TES-ADT), producing more efficient charge-carrier transport, in comparison to μm-sized pentacene crystals containing a face-to-edge packing. Low-voltage operating TES-ADT OFETs showed good device performance (μFET ≈ 1.3 cm2V−1 s−1, Vth ≈ 0.5 V, SS ≈ 0.2 V), as well as excellent device reliability.

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