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Keywords:

  • InAs;
  • nanopillars;
  • spontaneous polarization;
  • polytype heterocrystalline structures;
  • off-axis electron holography;
  • probe-corrected HAADF imaging
Thumbnail image of graphical abstract

Polarization fields within InAs nanopillars with zincblende(ZB)/wurtzite(WZ) polytype stacking are quantified. The displacement of charged ions inside individual tetrahedra of WZ regions is measured at the atomic scale. The variations of spontaneous polarization along the interface normal are related to strain at interfaces of different polytypes. Thus, direct correlation between local atomic structure and electric properties is demonstrated.