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Keywords:

  • block copolymers;
  • nanowires;
  • patterning;
  • silicon;
  • photoelectron spectroscopy
Thumbnail image of graphical abstract

A simple technique is demonstrated to fabricate horizontal, uniform, and hexagonally arranged Sinanowire arrays with controlled orientation and density at spatially well defined locations on a substrate based on an in situ hard-mask pattern-formation approach by microphase-separated block-copolymer thin films. The technique may have significant application in the manufacture of transistor circuitry.