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Fabrication of Ordered, Large Scale, Horizontally-Aligned Si Nanowire Arrays Based on an In Situ Hard Mask Block Copolymer Approach

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Abstract

A simple technique is demonstrated to fabricate horizontal, uniform, and hexagonally arranged Sinanowire arrays with controlled orientation and density at spatially well defined locations on a substrate based on an in situ hard-mask pattern-formation approach by microphase-separated block-copolymer thin films. The technique may have significant application in the manufacture of transistor circuitry.

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