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Trap-Limited Exciton Diffusion in Organic Semiconductors

Authors

  • Oleksandr V. Mikhnenko,

    1. Zernike Institute for Advanced Materials, University of Groningen, The Netherlands
    2. Center for Polymers and Organic Solids, Department of Chemistry and Biochemistry, University of California at Santa Barbara, Santa Barbara, CA, USA
    3. Dutch Polymer Institute, Eindhoven, The Netherlands
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  • Martijn Kuik,

    1. Zernike Institute for Advanced Materials, University of Groningen, The Netherlands
    2. Center for Polymers and Organic Solids, Department of Chemistry and Biochemistry, University of California at Santa Barbara, Santa Barbara, CA, USA
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  • Jason Lin,

    1. Center for Polymers and Organic Solids, Department of Chemistry and Biochemistry, University of California at Santa Barbara, Santa Barbara, CA, USA
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  • Niels van der Kaap,

    1. Zernike Institute for Advanced Materials, University of Groningen, The Netherlands
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  • Thuc-Quyen Nguyen,

    1. Center for Polymers and Organic Solids, Department of Chemistry and Biochemistry, University of California at Santa Barbara, Santa Barbara, CA, USA
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  • Paul W. M. Blom

    Corresponding author
    1. Max Planck Institute for Polymer Research, Mainz, Germany
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Abstract

From time-resolved luminescence measurements it is demonstrated that the background concentration of excitonquenching defects in a range of organic semiconductors is the same as their electron-trap concentration. This observation suggests that the exciton-quenching defects and the electron traps share the same origin. The typical exciton diffusion length of 5–8 nm for organic semiconductors is therefore governed by the distance between the universal electron traps.

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