Advanced Materials

3D-Transistor Array Based on Horizontally Suspended Silicon Nano-bridges Grown via a Bottom-Up Technique

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Abstract

Integrated surround-gate field-effect-transistors enabled by bottom-up synthesis of nano-bridges are demonstrated. Horizontally oriented silicon nano-bridge devices are fabricated avoiding the rigorous processes for aligning and contacting nanowires grown via a bottom-up technique. Evaluation of electrical properties and a memory device application of the transistors are presented.

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