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Advanced Materials

Maximizing Integrated Optical and Electrical Properties of a Single ZnO Nanowire through Native Interfacial Doping

Authors

  • Huaiyi Ding,

    1. Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, P.R. China
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  • Nan Pan,

    Corresponding author
    1. Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, P.R. China
    2. Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, Anhui, P.R. China
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  • Chao Ma,

    1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, P.R. China
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  • Yukun Wu,

    1. Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, P.R. China
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  • Junwen Li,

    1. Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, P.R. China
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  • Hongbing Cai,

    1. Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, P.R. China
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  • Kun Zhang,

    1. Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, P.R. China
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  • Guanghui Zhang,

    1. Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, P.R. China
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  • Wenzhen Ren,

    1. Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, P.R. China
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  • Jianqi Li,

    1. Beijing National Laboratory for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing, P.R. China
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  • Yi Luo,

    1. Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, P.R. China
    2. Department of Theoretical Chemistry and Biology, School of Biotechnology, Royal Institute of Technology, Stockholm, Sweden
    3. Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, Anhui, P.R. China
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  • Xiaoping Wang,

    1. Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, P.R. China
    2. Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, Anhui, P.R. China
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  • J. G. Hou

    1. Hefei National Laboratory for Physical Sciences at the Microscale, University of Science and Technology of China, Hefei, Anhui, P.R. China
    2. Synergetic Innovation Center of Quantum Information & Quantum Physics, University of Science and Technology of China, Hefei, Anhui, P.R. China
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Abstract

A native interfacial doping layer introduced in core–shell type ZnO nano­wires by a simple vapor phase re-growth procedure endows the produced nano­wires with both excellent electrical and optical performances compared to conventional homogeneous ZnO nanowires. The unique Zn-rich interfacial structure in the core–shell nanowires plays a crucial role in the outstanding performances.

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