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Growth of Large-Area 2D MoS2(1-x)Se2x Semiconductor Alloys

Authors

  • Qingliang Feng,

    1. Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory for Structural, Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing, P. R. China
    2. CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, P. R. China
    3. School of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou, P. R. China
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    • These authors contributed equally to this work.

  • Yiming Zhu,

    1. CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, P. R. China
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    • These authors contributed equally to this work.

  • Jinhua Hong,

    1. State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province and Department of Materials Science and Engineering, Zhejiang University, Hangzhou, P. R. China
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  • Mei Zhang,

    1. CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, P. R. China
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  • Wenjie Duan,

    1. Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory for Structural, Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing, P. R. China
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  • Nannan Mao,

    1. Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory for Structural, Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing, P. R. China
    2. CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, P. R. China
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  • Juanxia Wu,

    1. Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory for Structural, Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing, P. R. China
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  • Hua Xu,

    1. Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory for Structural, Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing, P. R. China
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  • Fengliang Dong,

    1. CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, P. R. China
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  • Fang Lin,

    1. College of Science, South China Agricultural University, Guangzhou, P. R. China
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  • Chuanhong Jin,

    1. State Key Laboratory of Silicon Materials, Key Laboratory of Advanced Materials and Applications for Batteries of Zhejiang Province and Department of Materials Science and Engineering, Zhejiang University, Hangzhou, P. R. China
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  • Chunming Wang,

    1. School of Chemistry and Chemical Engineering, Lanzhou University, Lanzhou, P. R. China
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  • Jin Zhang,

    Corresponding author
    1. Center for Nanochemistry, Beijing National Laboratory for Molecular Sciences, Key Laboratory for the Physics and Chemistry of Nanodevices, State Key Laboratory for Structural, Chemistry of Unstable and Stable Species, College of Chemistry and Molecular Engineering, Peking University, Beijing, P. R. China
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  • Liming Xie

    Corresponding author
    1. CAS Key Laboratory of Standardization and Measurement for Nanotechnology, National Center for Nanoscience and Technology, Beijing, P. R. China
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Abstract

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Semiconducting MoS2(1-x)Se2x mono­layers where x = 0–0.40 are successfully grown over large areas. A random arrangement of the S and Se atoms and a tunable bandgap photoluminescence are observed. Atomically thin, 2D semiconductor alloys with tunable bandgaps have potential applications in nano- and opto-electronics. Field-effect transistors fabricated with the monolayers exhibit high on/off ratios of >105.

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