Advanced Materials

Enhanced Charge Carrier Mobility in Two-Dimensional High Dielectric Molybdenum Oxide (Adv. Mater. 1/2013)

Authors

  • Sivacarendran Balendhran,

    Corresponding author
    1. MicroNanoElectronics and Sensor Technology, Research Group and Functional Materials and Microsystems Research Group, School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia
    • MicroNanoElectronics and Sensor Technology, Research Group and Functional Materials and Microsystems Research Group, School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia
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  • Junkai Deng,

    1. Department of Materials Engineering, Monash University, Clayton, Victoria, Australia
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  • Jian Zhen Ou,

    1. MicroNanoElectronics and Sensor Technology, Research Group and Functional Materials and Microsystems Research Group, School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia
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  • Sumeet Walia,

    1. MicroNanoElectronics and Sensor Technology, Research Group and Functional Materials and Microsystems Research Group, School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia
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  • James Scott,

    1. MicroNanoElectronics and Sensor Technology, Research Group and Functional Materials and Microsystems Research Group, School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia
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  • Jianshi Tang,

    1. Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California, USA
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  • Kang L. Wang,

    1. Device Research Laboratory, Department of Electrical Engineering, University of California, Los Angeles, California, USA
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  • Matthew R. Field,

    1. School of Applied Sciences, RMIT University, Melbourne, Victoria, Australia
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  • Salvy Russo,

    1. School of Applied Sciences, RMIT University, Melbourne, Victoria, Australia
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  • Serge Zhuiykov,

    1. Materials Science and Engineering Division, CSIRO, Highett, Victoria, Australia
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  • Michael S. Strano,

    1. Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts, USA
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  • Nikhil Medhekar,

    Corresponding author
    1. Department of Materials Engineering, Monash University, Clayton, Victoria, Australia
    • Department of Materials Engineering, Monash University, Clayton, Victoria, Australia.
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  • Sharath Sriram,

    1. MicroNanoElectronics and Sensor Technology, Research Group and Functional Materials and Microsystems Research Group, School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia
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  • Madhu Bhaskaran,

    Corresponding author
    1. MicroNanoElectronics and Sensor Technology, Research Group and Functional Materials and Microsystems Research Group, School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia
    • MicroNanoElectronics and Sensor Technology, Research Group and Functional Materials and Microsystems Research Group, School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia
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  • Kourosh Kalantar-zadeh

    Corresponding author
    1. MicroNanoElectronics and Sensor Technology, Research Group and Functional Materials and Microsystems Research Group, School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia
    • MicroNanoElectronics and Sensor Technology, Research Group and Functional Materials and Microsystems Research Group, School of Electrical and Computer Engineering, RMIT University, Melbourne, Victoria, Australia
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Abstract

Extremely high carrier mobilities are achieved in layered molybdenum oxide by Sivacarendran Balendhran, Kourosh Kalantar-zadeh, and co-workers on page 109. This is achieved by intercalation of the octahedral molybdenum oxide lattice with hydrogen, which tunes the bandgap of the material. Carrier mobilities of 1100 cm2 V−1 s−1 and greater are attained, highlighting the potential of ultrathin molybdenum oxide for high speed nanoelectronics.

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