Advanced Materials

Flexible Electronics: Layer-by-Layer-Assembled Reduced Graphene Oxide/Gold Nanoparticle Hybrid Double-Floating-Gate Structure for Low-Voltage Flexible Flash Memory (Adv. Mater. 6/2013)

Authors

  • Su-Ting Han,

    1. Department of Physics and Materials Science and Center of Super-Diamond and Advanced, Films (COSDAF), City University of Hong Kong, Kowloong Tong, Hong Kong SAR
    Current affiliation:
    1. S. T. Han and Y. Zhou contributed equally to this work.
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  • Ye Zhou,

    1. Department of Physics and Materials Science and Center of Super-Diamond and Advanced, Films (COSDAF), City University of Hong Kong, Kowloong Tong, Hong Kong SAR
    Current affiliation:
    1. S. T. Han and Y. Zhou contributed equally to this work.
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  • Chundong Wang,

    1. Department of Physics and Materials Science and Center of Super-Diamond and Advanced, Films (COSDAF), City University of Hong Kong, Kowloong Tong, Hong Kong SAR
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  • Lifang He,

    1. Department of Physics and Materials Science and Center of Super-Diamond and Advanced, Films (COSDAF), City University of Hong Kong, Kowloong Tong, Hong Kong SAR
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  • Wenjun Zhang,

    1. Department of Physics and Materials Science and Center of Super-Diamond and Advanced, Films (COSDAF), City University of Hong Kong, Kowloong Tong, Hong Kong SAR
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  • V. A. L. Roy

    Corresponding author
    1. Department of Physics and Materials Science and Center of Super-Diamond and Advanced, Films (COSDAF), City University of Hong Kong, Kowloong Tong, Hong Kong SAR
    • Department of Physics and Materials Science and Center of Super-Diamond and Advanced, Films (COSDAF), City University of Hong Kong, Kowloong Tong, Hong Kong SAR.
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Abstract

V. A. L. Roy and co-workers report on page 872 a hybrid double floating gate low voltage flexible flash memory device by utilizing rGO sheets monolayer and Au NPs array as upper and lower floating gates respectively. As a buffer layer, rGO traps charges and also introduces an energy barrier between Au NPs and the channel, eventually enhancing both the retention time and memory window. The proposed memory device has been extended to flexible substrates to facilitate this method to build innovative flash memories.

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