InN Nanowires: Energy Harvesting from the Obliquely Aligned InN Nanowire Array with a Surface Electron-Accumulation Layer (Adv. Mater. 6/2013)

Authors

  • Nai-Jen Ku,

    1. Department of Materials Science and Engineering, National Cheng Kung University, Tainan, 701 Taiwan
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  • Chao-Hung Wang,

    1. Department of Materials Science and Engineering, National Cheng Kung University, Tainan, 701 Taiwan
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  • Jun-Han Huang,

    1. Department of Materials Science and Engineering, National Cheng Kung University, Tainan, 701 Taiwan
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  • Hsin-Chiao Fang,

    1. Department of Materials Science and Engineering, National Cheng Kung University, Tainan, 701 Taiwan
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  • Po-Chien Huang,

    1. Department of Materials Science and Engineering, National Cheng Kung University, Tainan, 701 Taiwan
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  • Chuan-Pu Liu

    Corresponding author
    1. Department of Materials Science and Engineering, Center for Micro/Nano Science and Technology, Research Center for Energy Technology and Strategy, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, 701 Taiwan
    • Department of Materials Science and Engineering, Center for Micro/Nano Science and Technology, Research Center for Energy Technology and Strategy, Advanced Optoelectronic Technology Center, National Cheng Kung University, Tainan, 701 Taiwan.
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Abstract

original image

The glancing angle deposition technique can be employed to control the growth direction of InN nanorods, enabling larger deformation attainable merely from external normal forces for potential applications in nanopiezotronic and nanogenerator devices. This study by Chuan-Pu Liu and co-workers on page 861 demonstrates tremendous improvement in electricity output of nanogenerators made of obliquely aligned InN nanorod arrays from the ambient environment, leading to the realization of self-powered nanodevices.

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