Graphene: Two-Stage Metal-Catalyst-Free Growth of High-Quality Polycrystalline Graphene Films on Silicon Nitride Substrates (Adv. Mater. 7/2013)

Authors

  • Jianyi Chen,

    1. Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Yunlong Guo,

    1. Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Yugeng Wen,

    1. Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Liping Huang,

    1. Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Yunzhou Xue,

    1. Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Dechao Geng,

    1. Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Bin Wu,

    1. Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Birong Luo,

    1. Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Gui Yu,

    1. Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
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  • Yunqi Liu

    Corresponding author
    1. Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China
    • Beijing National Laboratory for Molecular Sciences, Institute of Chemistry, Chinese Academy of Sciences, Beijing 100190, P. R. China.
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Abstract

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High-quality graphene polycrystalline films are directly synthesized on dielectric silicon nitride substrates by using two-stage metal-catalyst-free chemical vapor deposition. Thus large-scale electronic devices are easily fabricated on these films without complicated transfer processes and their associated problems. The method is compatible with current Si processing techniques. Further details can be found in the article by Yunqi Liu and co-workers on page 992.

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