Semiconductors: Evolutionary Selection Growth: Towards Template-Insensitive Preparation of Single-Crystal Layers (Adv. Mater. 9/2013)



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A method in which single-crystalline functional semiconductor material can be grown on amorphous surfaces is described by Jie Song and co-workers on page 1285. Selectively defined layers of GaN are grown by metal-organic chemical vapor deposition on SiO2/Si(100) substrates utilizing the evolutionary selection of grains, enabling the formation of semiconductor crystals suitable for use in electronic and optoelectronic devices. The inside cover depicts possible device-scale integration, enabling high performance circuits utilizing compound semiconductors and Si CMOS. Cover image by Cindy Lau, scientific illustrator.