• semiconductor materials;
  • epitaxy;
  • thin films;
  • microstructures;
  • electro-optical materials
Thumbnail image of graphical abstract

A method in which single-crystalline functional semiconductor material can be grown on amorphous surfaces is described by Jie Song and co-workers on page 1285. Selectively defined layers of GaN are grown by metal-organic chemical vapor deposition on SiO2/Si(100) substrates utilizing the evolutionary selection of grains, enabling the formation of semiconductor crystals suitable for use in electronic and optoelectronic devices. The inside cover depicts possible device-scale integration, enabling high performance circuits utilizing compound semiconductors and Si CMOS. Cover image by Cindy Lau, scientific illustrator.