Structural and Optoelectronic Characterization of RF Sputtered ZnSnN2 (Adv. Mater. 18/2013)



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The development of earth-abundant semiconductors is an important step in working towards the realization of photovoltaic production on a global scale. On page 2562, Harry A. Atwater and co-workers successfully synthesize stoichiometric ZnSnN2, a new earth-abundant semiconductor material, which has a theoretical direct band gap of 1.42 eV, making it well suited for potential applications in thin film photovoltaics.