Advanced Materials

Organic Electronics: Printed, sub-2V ZnO Electrolyte Gated Transistors and Inverters on Plastic (Adv. Mater. 25/2013)

Authors

  • Kihyon Hong,

    1. Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. SE. Minneapolis, MN 55455, USA
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  • Se Hyun Kim,

    1. Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. SE. Minneapolis, MN 55455, USA
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  • Keun Hyung Lee,

    1. Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. SE. Minneapolis, MN 55455, USA
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  • C. Daniel Frisbie

    Corresponding author
    1. Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. SE. Minneapolis, MN 55455, USA
    • Department of Chemical Engineering and Materials Science, University of Minnesota, 421 Washington Ave. SE. Minneapolis, MN 55455, USA.
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Abstract

Printed, flexible ZnO electrolyte-gated transistors (EGTs) and inverters are demonstrated by C. Daniel Frisbie and co-workers on page 3413. ZnO-EGTs with high capacitance ion-gel gate insulators are printed on polyimide and the devices exhibit high electron mobility (1.6 cm−2 V−1 s−1), low operation voltage (<2 V), and good electrical and mechanical stability. These printed n-type EGTs are promising for next generation flexible devices.

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