Advanced Materials

Interfaces: Ultralow Contact Resistance at an Epitaxial Metal/Oxide Heterojunction Through Interstitial Site Doping (Adv. Mater. 29/2013)

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Abstract

Epitaxial Cr atoms on SrTiO3(001) generate an ideal Ohmic contact with excellent adhesion and a very low contact resistance. Scott Chambers, Meng Gu, and co-workers show on page 4001 that this occurs because of Cr indiffusion to interstitial sites, charge transfer to Ti ions, and metalinduced downward band bending.

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