Organic Field-Effect Transistors: Simple Bar-Coating Process for Large-Area, High-Performance Organic Field-Effect Transistors and Ambipolar Complementary Integrated Circuits (Adv. Mater. 31/2013)

Authors

  • Dongyoon Khim,

    1. Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
    Current affiliation:
    1. Both authors contributed equally to this work.
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  • Hyun Han,

    1. Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu, Seoul 100-715, Republic of Korea
    Current affiliation:
    1. Both authors contributed equally to this work.
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  • Kang-Jun Baeg,

    1. Nano Carbon Materials Research Group, Korea Electrotechnology Research Institute (KERI), 70 Boolmosangil, Changwon, Gyeongsangnam-do 642-120, Republic of Korea
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  • Juhwan Kim,

    1. Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
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  • Sun-Woo Kwak,

    1. Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu, Seoul 100-715, Republic of Korea
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  • Dong-Yu Kim,

    Corresponding author
    1. Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea
    • Heeger Center for Advanced Materials, School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST), 261 Cheomdan-gwagiro, Buk-gu, Gwangju 500-712, Republic of Korea.
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  • Yong-Young Noh

    Corresponding author
    1. Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu, Seoul 100-715, Republic of Korea
    • Department of Energy and Materials Engineering, Dongguk University, 26 Pil-dong, 3-ga, Jung-gu, Seoul 100-715, Republic of Korea
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Abstract

original image

Large-area, flexible polymer transistors and integrated circuits are demonstrated via a simple wire-bar-coating process by Yong-Young Noh and co-workers on page 4302. Both highly crystalline conjugated polymers and very smooth insulating polymer films are formed by a consecutive wirebar-coating process on a four-inch plastic substrate, with precise control of the film thickness from 30 nm to 500 μm.

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