Advanced Materials

Field-Effect Transistors: Sub-10 nm Graphene Nanoribbon Array Field-Effect Transistors Fabricated by Block Copolymer Lithography (Adv. Mater. 34/2013)

Authors

  • Jeong Gon Son,

    1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139 (USA)
    2. Photo-Electronic Hybrids Research Center, Korea Institute of Science and Technology, Seoul, 136-791 (South Korea)
    Current affiliation:
    1. These authors contributed equally to this work.
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  • Myungwoo Son,

    1. School of Materials Science and Engineering and Department of Nanobio Materials and Electronics, Gwangju Institute of Science & Technology, Gwangju, 500-712 (South Korea)
    Current affiliation:
    1. These authors contributed equally to this work.
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  • Kyeong-Joo Moon,

    1. Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749 (South Korea)
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  • Byoung Hun Lee,

    1. School of Materials Science and Engineering and Department of Nanobio Materials and Electronics, Gwangju Institute of Science & Technology, Gwangju, 500-712 (South Korea)
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  • Jae-Min Myoung,

    1. Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749 (South Korea)
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  • Michael S. Strano,

    1. Department of Chemical Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139 (USA)
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  • Moon-Ho Ham,

    Corresponding author
    1. School of Materials Science and Engineering and Department of Nanobio Materials and Electronics, Gwangju Institute of Science & Technology, Gwangju, 500-712 (South Korea)
    • School of Materials Science and Engineering and Department of Nanobio Materials and Electronics, Gwangju Institute of Science & Technology, Gwangju, 500-712 (South Korea).
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  • Caroline A. Ross

    Corresponding author
    1. Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139 (USA)
    • Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, MA, 02139 (USA)
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Abstract

Arrays of field-effect transistors are described by Caroline Ross, Moon-Ho Ham and co-workers on page 4723. These are based on highly aligned sub-10 nm graphene nanoribbons that are fabricated over large areas by etching CVD-grown graphene, using a mask made by the directed self-assembly of a cylindrical PS-block-PDMS block copolymer under solvent annealing guided by a removable template.

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