Thin Films: Mapping of Trap Densities and Hotspots in Pentacene Thin-Film Transistors by Frequency-Resolved Scanning Photoresponse Microscopy (Adv. Mater. 40/2013)

Authors

  • Christian Westermeier,

    1. Fakultät für Physik 8 CeNS, Ludwig-Maximilians-Universität München, Munich, Germany
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  • Matthias Fiebig,

    1. Fakultät für Physik 8 CeNS, Ludwig-Maximilians-Universität München, Munich, Germany
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  • Bert Nickel

    Corresponding author
    1. Fakultät für Physik 8 CeNS, Ludwig-Maximilians-Universität München, Munich, Germany
    • Fakultät für Physik 8 CeNS, Ludwig-Maximilians-Universität München, Geschwister-Scholl-Platz 1, 80539 Munich Germany

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Abstract

image

On page 5719, Bert Nickel and co-workers use a pulsed laser scanning microscope for mapping of trap densities in pentacene thin-film transistors. They depict the light-induced change of the transistor current in dependence on the position, the modulation frequency of illumination, and on the applied voltages. The collision of an exciton with a trapped charge in a conducting transistor channel causes the carrier release – the elemental process that induces the observed photoresponse. The graphic is by Christoph Hohmann, Nanosystems Initiative Munich (NIM).

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