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Graphene: Van der Waals Epitaxial Double Heterostructure: InAs/Single-Layer Graphene/InAs (Adv. Mater. 47/2013)

Authors

  • Young Joon Hong,

    Corresponding author
    1. Department of Nanotechnology and Advanced Materials Engineering Graphene Research Institute and Hybrid Materials Research Center, Sejong University, Seoul, Korea
    2. Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo, Japan
    • Department of Nanotechnology and Advanced Materials Engineering Graphene Research Institute and Hybrid Materials Research Center, Sejong University, Seoul 143–747 Korea

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  • Jae Won Yang,

    1. Department of Chemistry Center for Superfunctional Materials, Pohang University of Science and Technology (POSTECH), Pohang, Korea
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  • Wi Hyoung Lee,

    1. Department of Organic and Nano System Engineering, Konkuk University, Seoul, Korea
    2. Department of Mechanical Engineering and the Materials Science and Engineering Program, The University of Texas at Austin, Austin, TX, United States
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  • Rodney S. Ruoff,

    1. Department of Mechanical Engineering and the Materials Science and Engineering Program, The University of Texas at Austin, Austin, TX, United States
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  • Kwang S. Kim,

    Corresponding author
    1. Department of Chemistry Center for Superfunctional Materials, Pohang University of Science and Technology (POSTECH), Pohang, Korea
    • Department of Nanotechnology and Advanced Materials Engineering Graphene Research Institute and Hybrid Materials Research Center, Sejong University, Seoul 143–747 Korea

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  • Takashi Fukui

    1. Research Center for Integrated Quantum Electronics, Hokkaido University, Sapporo, Japan
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Abstract

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Epitaxial semiconductor/graphene double heterostructures are fabricated by vapor-phase van der Waals epitaxy of InAs on both sides of suspended graphene, as reported on page 6847. K. S. Kim, Y. J. Hong and co-workers demonstrate that the weak van der Waals attraction facilitates a preferential growth direction of InAs exclusively along the As-polar direction, which results in a polarity inversion of the double heterostructures. The first-principles and density functional calculations clarify why and how the conductive graphene layer yields the polarity inversion for sp3/sp2/sp3-type double heterostructures.

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